• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a broadband anti-reflection glass for a copper-indium-gallium-selenide (CIGS) thin-film solar cell. The broadband anti-reflection glass comprises an ultra-white patterned photovoltaic glass substrate (1) and a matt layer (4) and a patterned surface (5) which are arranged on the ultra-white patterned photovoltaic glass substrate (1), the matt layer (4) having two Layers of an anti-reflection film are coated, which are a bottom-up successive film (2) with a high refractive index and a film (3) with a low refractive index to form a double-layered λ / 4-λ / 2 anti-reflection film structure; wherein the high refractive index film (2) is a TiO 2 film having a refractive index of 2.0-2.2 and a thickness of 90-120 nm; and the low refractive index film (3) is a SiO2-TiO2 composite film with an adjustable refractive index, and the SiO 2 -TiO 2 composite film has a refractive index of 1.7-1.9 and a thickness of 60-80 nm. The present invention is characterized by the following advantages: 1. The broadband anti-reflection glass has a simple production process at low cost and is inexpensive; 2. The transmittance of the outer layer and the additional performance value are high; 3. The broadband transmission is high and the durability of the film is good; 4. The efficiency of power generation of a CIGS thin-film cell module can be improved considerably, the increase being able to reach 3%.
    公开号:CH715320A2
    申请号:CH00978/19
    申请日:2019-07-31
    公开日:2020-03-13
    发明作者:Ma Liyun；Jin Liangmao；Tang Yongkang；Gan Zhiping；Wang Dong；Li Gang；Bao Tian；Su Wenjing
    申请人:China Building Materials Bengbu Glass Industrial Design & Res Institute Co Ltd；
    IPC主号:
    专利说明:

    Technical field
    The present invention belongs to the field of green new energy and relates to the field of solar cells and, in particular, to a broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell.
    State of the art
    A copper indium gallium selenide (CIGS) thin film solar cell is a new environmentally friendly energy source with good development prospects. Since a CIGS thin film cannot be exposed to an external environment for a long time, bright white structured glass is one of the best materials for protecting crystalline silicon and currently has a high transmittance and determines the power generated by the CIGS thin film solar cell. One side of the ultra-white patterned glass is matt (the matt layer has a diffuse reflection effect and reduces the reflected light energy) and the other side of the ultra-white patterned glass is a patterned surface (reinforcement of the adhesion of photovoltaic glass to an EVA adhesive film). When the ultra white patterned glass is used as the packaging glass of the CIGS thin film cell, the transmittance is about 91.5%, while the loss portion of the reflected light is about 5%, and a part absorbed by the glass reaches 3%. In order to increase the transmittance, it is necessary to increase the reflectivity of the matt layer of the ultra-white patterned glass. At present, the transmittance is mainly improved by coating the packaging glass with an anti-reflection film.
    Currently, photovoltaic anti-reflective film glass, which is sold at home and abroad, is mainly manufactured by roller coating. Imported and domestic anti-reflective coating film liquids for roller coating are single silicone solvent liquids and have the following main defects:<tb> 1. <SEP> A transmission curve has a V shape after coating, and the value begins to fall near 560 nm after reaching the tip, and a full spectrum of light cannot be fully utilized.<tb> 2. <SEP> The surface hardness of a film layer is low (generally around 3H), the abrasion resistance is poor, and if the hardness is increased, a loss in the transmittance of the photovoltaic coating glass has to be accepted.
    Presentation of the invention
    An object of the present invention is to provide a broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell in order to solve the problem that the existing anti-reflection glass has a low transmittance and a low hardness.
    To achieve the above aim, the technical solution of the present invention is as follows:a broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell contains an ultra-white patterned photovoltaic glass substrate and a matt layer as well as a patterned surface which are arranged on the ultra-white patterned photovoltaic glass substrate, the matt layer being coated with two layers of an anti-reflection film which are a high refractive index film and a low refractive index film from bottom to top to form a λ / 4-λ / 2 double-layer anti-reflection film structure;wherein the high refractive index film is a TiO2 film with a refractive index of 2.0-2.2 and a thickness of 90-120 nm;wherein the low refractive index film is a SiO2-TiO2 composite film with an adjustable refractive index and the SiO2-TiO2 composite film has a refractive index of 1.7-1.9 and a thickness of 60-80 nm; the refractive index of the composite film can be adjusted by changing the TiO2 content in such a way that it fulfills the refractive index of the specified requirements of an outer layer film and the high level of antireflection of the antireflection film is ensured within the broadband wavelength range.
    [0006] The present invention has the following advantages:<tb> 1. <SEP> The broadband anti-reflection glass is characterized by a simple manufacturing process at low cost and is inexpensive;<tb> 2. <SEP> The transmittance of the outer layer and the additional performance are high;<tb> 3. <SEP> The broadband transmission is high and the durability of the film is good;<tb> 4. <SEP> The efficiency of the power generation of a CIGS thin-film cell module can be improved considerably, the increase being able to reach 3%.
    Brief description of the figures
    [0007] Exemplary embodiments of the invention are described in more detail below with reference to the figures, which show:<tb> Fig. 1 <SEP> is a schematic view of a structure of the present invention;<tb> Fig. 2 <SEP> is a comparative diagram of curves of the transmittance after coating and the transmittance of an uncoated original piece.
    Ways of Carrying Out the Invention
    The present invention will be further described with reference to FIG. 1. For a broadband anti-reflective glass for a copper indium gallium selenide thin film solar cell, the specific implementation steps are as follows:
    EmbodimentA broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell comprises an ultra-white patterned photovoltaic glass substrate 1 and a matt layer 4 as well as a patterned surface 5, which are arranged on the ultra-white patterned photovoltaic glass substrate 1, wherein the matt layer 4 is successively coated by means of roll coating with a layer of a high-index TiO2 film 2 with a thickness of 92 nm and a refractive index of 2.2 and a layer of a SiO2-TiO2 composite film 3 with a thickness of 80 nm and a refractive index of 1.88.
    Embodiment 2A broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell comprises an ultra-white patterned photovoltaic glass substrate 1 and a matt layer 4 and a patterned surface 5, which are arranged on the ultra-white patterned photovoltaic glass substrate 1, the matt layer 4 is successively coated by chemical vapor deposition with a layer of a high-index TiO2 film 2 with a thickness of 115 nm and a refractive index of 2.04 and a layer of a SiO2-TiO2 composite film 3 with a thickness of 62 nm and a refractive index of 1.73.
    Embodiment 3A broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell comprises an ultra-white patterned photovoltaic glass substrate 1 and a matt layer 4 as well as a patterned surface 5, which are arranged on the ultra-white patterned photovoltaic glass substrate 1, wherein the matt layer 4 is successively coated by means of magnetron sputtering with a layer of a highly refractive TiO2 film 2 with a thickness of 106 nm and a refractive index of 2.1 and a layer of a SiO2-TiO2 composite film 3 with a thickness of 75 nm and a refractive index of 1.8.
    权利要求:
    Claims (1)
    [1]
    1. Broadband anti-reflection glass for a copper-indium-gallium-selenide thin-film solar cell, comprising an ultra-white patterned photovoltaic glass substrate (1) as well as a matt layer (4) and a patterned surface (5), which are based on the ultra-white patterned photovoltaic Glass substrate (1) are arranged, wherein the matt layer (4) is coated with two layers of an anti-reflection film, which are successively from bottom to top a film (2) with a high refractive index and a film (3) with a low refractive index to a double layer λ To form / 4-λ / 2 anti-reflection film structure; wherein the inner layer film (2) having a high refractive index is a TiO2 film having a refractive index of 2.0-2.2 and a thickness of 90-120 nm; and the outer layer film (3) having a low refractive index is a SiO2-TiO2 composite film with an adjustable refractive index, and the SiO2-TiO2 composite film has a refractive index of 1.7-1.9 and a thickness of 60-80 nm.
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    同族专利:
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    CN109095785A|2018-12-28|
    引用文献:
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    CN102503168A|2011-09-23|2012-06-20|四川大学|Solar battery packaging glass plated with three layers of anti-reflection films and preparation method thereof|
    CN106784088A|2016-12-21|2017-05-31|蚌埠玻璃工业设计研究院|A kind of photovoltaic module uses up conversion anti-reflective glass|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    CN201811029567.6A|CN109095785A|2018-09-05|2018-09-05|Copper-indium-galliun-selenium film solar cell wide range anti-reflective glass|
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